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| 6MBI100S-140 IGBT MODULE ( S series) 1400V / 100A 6 in one-package Features * Compact Package * P.C.Board Mount Module * Low VCE(sat) IGBT Modules Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tj=25C current Tj=75C 1ms Tj=25C Tj=75C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage *1 Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *2 Rating 1400 20 150 100 300 200 100 200 700 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A A A A W C C V N*m Equivalent Circuit Schematic 21(P) 13(P) 1(Gu) 5(Gv) 9(Gw) 2(Eu) 19(U) 6(Ev) 17(V) 10(Ew) 15(W) 3(Gx) 7(Gy) 11(Gz) 4(Ex) 20(N) 8(Ey) 12(Ez) 14(N) *1:All terminals should be connected together when isolation test will be done. *2: Recommendable value : 2.5 to 3.5 N*m (M5) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Characteristics Min. Typ. - - - - 5.5 7.2 - 2.4 - 3.0 - 12000 - 2500 - 2200 - 0.35 - 0.25 - 0.1 - 0.45 - 0.08 - 2.6 - 2.2 - - Conditions Max. 1.0 0.2 8.5 2.7 - - - - 1.2 0.6 - 1.0 0.3 3.4 - 0.35 VGE=0V, VCE=1400V VCE=0V, VGE=20V VCE=20V, IC=100mA Tj=25C VGE=15V, IC=100A Tj=125C VGE=0V VCE=10V f=1MHz VCC=800V IC=100A VGE=15V RG=12 Tj=25C Tj=125C IF=100A IF=100A, VGE=0V Unit mA A V V pF s Turn-off time Diode forward on voltage Reverse recovery time V s Thermal resistance characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. - - - - - 0.05 Conditions Max. 0.18 0.36 - IGBT FWD the base to cooling fin C/W C/W C/W Unit Thermal resistance *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 6MBI100S-140 Characteristics Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 250 250 IGBT Module Collector current vs. Collector-Emitter voltage Tj= 125C (typ.) 200 VGE= 20V 15V 12V 200 VGE= 20V 15V 12V Collector current : Ic [ A ] 150 10V Collector current : Ic [ A ] 150 10V 100 100 50 50 8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 250 10 Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25C (typ.) Tj= 25C 200 Tj= 125C 150 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 100 4 Ic= 200A 2 Ic= 100A Ic= 50A 50 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C 50000 1000 Dynamic Gate charge (typ.) Vcc=800V, Ic=100A, Tj= 25C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 10000 Cies 600 15 400 10 Coes 200 5 1000 Cres 0 5 10 15 20 25 30 35 500 Collector - Emitter voltage : VCE [ V ] 0 0 200 400 600 800 Gate charge : Qg [ nC ] 0 1000 Gate - Emitter voltage : VGE [ V ] 6MBI100S-140 IGBT Module Switching time vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg= 12ohm, Tj= 25C 1000 1000 Switching time vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg= 12ohm, Tj= 125C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] ton toff tr 500 ton tr 100 100 tf tf 50 0 50 100 Collector current : Ic [ A ] 150 200 50 0 50 100 Collector current : Ic [ A ] 150 200 Switching time vs. Gate resistance (typ.) Vcc=800V, Ic=100A, VGE=15V, Tj= 25C 5000 40 Switching loss vs. Collector current (typ.) Vcc=800V, VGE=15V, Rg=12ohm Eon(125C) toff 35 Switching time : ton, tr, toff, tf [ nsec ] ton tr 1000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 30 Eon(25C) 25 Eoff(125C) 20 500 15 Eoff(25C) Err(125C) 10 100 tf 5 Err(25C) 50 10 50 Gate resistance : Rg [ohm] 100 200 0 0 50 100 Collector current : Ic [ A ] 150 200 Switching loss vs. Gate resistance (typ.) Vcc=800V, Ic=100A, VGE=15V, Tj= 125C 80 Eon 250 Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg=>12ohm, Tj=<125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] 200 60 Collector current : Ic [ A ] 300 150 40 100 Eoff 20 50 Err 0 10 50 100 Gate resistance : Rg [ohm] 0 0 200 400 600 800 1000 1200 1400 1600 Collector - Emitter voltage : VCE [ V ] 6MBI100S-140 IGBT Module Forward current vs. Forward on voltage (typ.) 250 300 Reverse recovery characteristics (typ.) Vcc=800V, VGE=15V, Rg=12ohm 200 Tj=125C Tj=25C Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] trr(125C) Forward current : IF [ A ] 100 Irr(125C) trr(25C) Irr(25C) 150 100 50 0 0 1 2 3 4 Forward on voltage : VF [ V ] 10 0 50 100 Forward current : IF [ A ] 150 200 Transient thermal resistance 1 Thermal resistanse : Rth(j-c) [ C/W ] FWD IGBT 0.1 0.01 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] Outline Drawings, mm mass : 260g |
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